SESSION H Wednesday, 1 October
Basic Mechanisms of Radiation Effects
Chairs: Federico Faccio & Scott Messenger
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Queen Elisabeth Hall
H1 09:35 - 09:50
TID-induced leakage current in a commercial 28-nm CMOS technology
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Authors: K. Sarbandi(1), G. Borghello(1), F. Faccio(1), S. Michelis(1), G. Ripamonti(1), G. Bantemits(1), G. Ciachera(2)
1. CERN, Switzerland, 2. CERN, France
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Presenting author: Kourosh Sarbandi
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This study examines radiation-induced leakage in 28nm CMOS FOXFETs, linking it to STI-junction interactions.
Results suggest BTBT as a key mechanism, with strong bias-temperature dependencies, impacting radiation-hardened
circuit reliability.
H2 09:50 - 10:05
Heavy-Ion Induced Microstructural Damage Leading to Leakage Current in SiC PiN Diode
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Authors: L. Qiu(1), Y. Bai(1), S. Zhao(2), J. Ding(3), P. Zhai(2), X. Liu(1)
1. Institute of Microelectronics, Chinese Academy of Sciences, China, 2. Institute of Modern Physics, Chinese Academy of Sciences, China, 3. Zhuzhou CRRC Times Semiconductor Company Ltd., China
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Presenting author: Leshan Qiu
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The microstructural damage at PN junction that leading to the SELC degradation of SiC PiN diode was observed for the first time, and the room and high temperature electrical characteristics of irradiated devices were investigated.
H3 10:05 - 10:20
Synergistic effect of 300 MeV proton and heavy ion irradiation on the electrical properties of β-Ga2O3 SBD
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Authors: Z. Zhang(1), T. Wang(1), C. Liu(1), L. Shu(2), Y. Zhang(1), C. Qi(1), G. Ma(1), M. Huo(1), L. Xiao(1)
1. Harbin Institute of Technology, China, 2. Institute of Microelectronics of the Chinese Academy of Sciences, China
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Presenting author: Zhengliang Zhang
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This work investigates the synergistic radiation effects of β-Gaâ‚‚O₃ SBDs under 300 MeV proton and 143 MeV Ar heavy-ion irradiation.
POSTERS
PH-1
Charge Collection in Solid State Detector: 2D Solver Extension for Semiconductor System​
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Authors: P. Caron(1), Q. Gibaru(1), M. Chabot(2), E. Rauly(2), V. Bolin(1), G. Gourves(1), J. Guerard(1), S. Bourdarie(1)
1. ONERA, France, 2. IJClab, France
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Presenting author: Pablo Caron
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​​In continuation of previous studies on the use of transients as a means of particle identification, this study explores the limits of 2D simulations and propose an extension of the equations to overcome these limitations.
PH-2
Towards Single Trap Monitoring in MOSFET Total Ionizing Dose Effects​
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Authors: A. Michalowskaforsyth(1), S. Ramazanoglu(1)
1. Graz University of Technology, Austria
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Presenting author: Alicja Michalowska Forsyth
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We present TID experiment with continuous frequency monitoring in a custom ring oscillator dedicated to study CMOS random-telegraph-noise. Analysis reveals discrete step-like events, suggesting observation of individual trapping/detrapping occurrences. Step-up events dominate pre-rebound, step-down after.
PH-3
Impact of P₂O₅ and N₂ Annealing on the TID Response of 4H-SiC Gate Oxides for space applications​
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Authors: V. Kotagama(1), R. Arne(1), M. Yildirim(1), N. Iosifidis(1), N. Arnold(1), V. Kilchytska(2), D. Flandre(2), V. Shah(1), M. Antoniou(1), P. Gammon(1)
1. University of Warwick, United Kingdom, 2. Universite Catholique de Louvain, Belgium
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Presenting author: Virendra Malin Kotagama
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The TID response of 4H-SiC MOSCAPs with thermal and ALD oxides is evaluated under Co-60 irradiation. A 30-minute Pâ‚‚Oâ‚… annealed oxide shows exceptional immunity, with minimal flatband voltage shift and density of interface states deviation.
PH-4
Comparative Analysis of SEGR and SEB Susceptibility in Si and SiC MOSFETs Using TCAD Modeling​
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Authors: C. Marques(1), A. Michez(2), T. Labau(1), R. Germanicus(3), F. Wrobel(2)
1. Delphea, France, 2. Université de Montpellier - IES, France, 3. CRISMAT LAMIPS, France
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Presenting author: Cleiton Marques
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This work compares Si and SiC VDMOSFETs under heavy-ion irradiation using TCAD simulations. Results reveal that SiC devices exhibit greater sensitivity to SEGR and SEB compared to their Si counterparts.
PH-5
Gate Oxide Degradation Mechanism Induced by Heavy Ion in SiC MOSFETs​
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Authors: Y. Xiao(1), L. Chaoming(1), Z. Jiaming(1), W. Tianqi(1), Q. Chunhua(1), H. Mingxue(1)
1. Harbin Institute of Technology, China
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Presenting author: Yiping Xiao
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This paper demonstrates a sequential degradation mechanism in the oxide, progressing from latent damages to microdose, and ultimately to the formation of microbreak, which is related to the initial ion-induced damage exacerbated under subsequent strikes.