SESSION D Friday, 3 October

Radiation Effects in Devices & ICs

Chairs: Jeffrey Black & Laurent Artola

Queen Elisabeth Hall

D1 11:05 - 11:20

Radiation Induced Leakage Current in 3-D NAND Technology

Authors: M. Kumar(1), M. Buddhanoy(1), J. Bell(1), A. Brandl(1), I. Chatterjee(2), B. Ray(3)

1. Colorado State University, USA, 2. Airbus, Germany, 3. Colorado State University-Fort Collins, USA

Presenting author: Mondol Anik Kumar

This paper demonstrates that floating-gate 3-D NAND is significantly more susceptible to radiation-induced-leakage-current (RILC) than charge-trap counterparts. RILC is higher in the lower layers and lower deck, and highest in the top threshold voltage state.

D2 11:20 - 11:35

TID Effects in Si and SiC Power MOSFETs and their implications on the performances of a Buck DC-DC Converter

Authors: H. Couillaud(1), M. Gaillardin(1), L. Artola(2)

1. CEA, France, 2. ONERA, France

Presenting Author: Hadrien Couillaud

TID effects in Si and SiC V-DMOSFETs are studied under various bias conditions. Experimental results reveal an unexpected TID sensitivity of the SiC MOSFET studied using TCAD simulations. DC/DC Buck tests confirm switching time degradation.

D3 11:35 - 11:50

Remaining Useful Life Prediction of Power Electronic Devices with Physics-Informed Deep Learning in Radiation Environments

Authors: L. Gao(1), C. Liu(1), Y. Xiao(1), C. Qi(1), M. Huo(1)

1. Harbin Institute of Technology, China

Presenting Author: Le Gao

This study presents a physics-informed deep learning approach for remaining useful life prediction of SiC MOSFETs under data-sparse conditions. Integrating irradiation-induced charge effects into a Transformer-based model, optimized via PSO, ensures robust, accurate predictions.

D4 11:50 - 12:05

TID Effects in Vertical SiC Power MOSFETs Irradiated at Different Temperatures

Authors: G. Andreetta(1), C. Martinella(2), P. Natzke(2), M. Bagatin(1), S. Gerardin(3), S. Mattiazzo(4), A. Paccagnella(1), U. Grossner(5), S. Bonaldo(1)

1. University of Padova, Italy, 2. APS Laboratory - ETH Zurich, Switzerland, 3. DEI - Padova University, Italy, 4. Università di Bergamo & INFN Padova, Italy, 5. APS - ETH Zurich, Switzerland

Presenting Author: Gabriele Andreetta

This study examines the TID effects induced by X-rays at different temperatures in SiC power MOSFETs. Irradiations at high temperatures evidence lower degradation of DC performance.

D5 12:05 - 12:20

Evaluation of Total Ionizing Dose Radiation Effects on Device and Circuit Variability in 22 nm FD-SOI

Authors: J. Zhao(1), Q. Yihong(2), L. Zheyi(3), M. Gorbunov(4), Q. Ma(2), X. Pengfei(2), L. Marien(2), T. Maraine(5), F. Saigné(6), P. Leroux(2), J. Prinzie(2)

1. KU Leuven, China, 2. KU Leuven, Belgium, 3. IMEC, Belgium, 4. Imec, Belgium, 5. Universit´e de Montpellier, France, 6. Université de Montpellier, France

Presenting Author: Jinghao Zhao

This paper investigates TID effects on mismatch in 22 nm FD-SOI NMOSFETs and dynamic comparators, revealing increased threshold voltage variability and offset voltage, while current factor remains stable due to the ultra-thin gate oxide.

POSTERS

PD-1

Machine Learning Assisted Modeling of Transient Dose Rate and Displacement Synergistic Effect for Circuit Simulation

Authors: L. Jian wen(1), L. Cai(1), W. Chen(1), Z. Zhang(1), W. Chen(2), C. Wang(2), J. Li(2), L. Ding(2), X. Guo(2)

1. the School of Microelectronics Science and Technology, Sun Yat-Sen University, China, 2. the National Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, China

Presenting Author: Lin Jian Wen

This paper proposes a machine learning-based ANN model to efficiently predict synergistic effects of transient dose rate and displacement damage on circuits, enabling accurate SPICE simulations for radiation reliability analysis in complex environments.

PD-2

TID Test of LNAs for Radiation-Tolerant Wireless Communication System Inside Nuclear Reactors

Authors: Y. Narukiyo(1), K. Yanaka(1), H. Hans(2), J. Mayeda(3), K. Yuasa(1), S. Kato(1), T. Ota(1), A. Shirane(1)

1. Institute of Integrated Research, Institute of Science Tokyo, Japan, 2. Institute of Integrated Research, Institute of Science Tokyo, Indonesia, 3. Institute of Integrated Research, Institute of Science Tokyo, USA

Presenting Author: Yasuto Narukiyo

To develop the transceiver for nuclear reactor, three different types of low-noise amplifiers (LNA) in the transceiver were designed for TID test conducted on each LNAs to evaluate their radiation tolerance under 50Mrad.

PD-3

Synergistic Behavior of Photocurrent of SPNP Bipolar Transistor under Sequential Pulsed γ-ray and Pulsed Neutron Irradiation

Authors: C. Wang(1), W. Chen(1), R. Li(1), J. Li(1), X. Guo(1), L. Ding(1), W. Ma(1)

1. National Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, China

Presenting Author: Chenhui Wang

Synergistic behavior of SPNP’s photocurrent under sequential pulsed γ-ray and neutron irradiation is explored taking into account the influence of transient ionizing damage caused by pulsed neutron, and new significant features of photocurrent are discovered.

PD-4

Displacement Damage Equivalence in GaN PIN Diodes: DPA Correlation in Proton, Neutron, and Heavy-Ion Irradiation Environment

Authors: Y. Xue(1), L. Ding(2)1)

1. Nrthwest Institute of Nuclear Technology, China, 2. Northwest Institute of Nuclear Technology, China

Presenting Author: Yuanyuan Xue

This study focuses on GaN PIN diodes, systematically conducting irradiation experiments with protons, neutrons, and low-, medium-, and high-energy heavy ions to investigate the impact of different types and energy particles on device electrical parameters.

PD-5

Unveiling Synergistic Radiation Effects in AlGaN/GaN HEMTs: A Comparative Study

Authors: A. Vilas bôas(1), S. Alberton(2), P. Garcia(1), N. Medina(3), V. Aguiar(4), R. Giacomini(1), T. Cavalcante(5), L. Seixas(6), F. Saulo(6), F. Palomo_pinto(7), M. Guazzelli(8)

1. FEI, Brazil, 2. University of Sao Paulo, Institute of Physics, Brazil, 3. Instituto de Física da Universidade de São Paulo, Brazil, 4. University of Sao Paulo, Brazil, 5. Instituto de Estudos Avançados (IEAv), Brazil, 6. CTI, Brazil, 7. Universidad de Sevilla, Spain, 8. Centro Universitário FEI, Brazil

Presenting Author: Alexis Cristiano Vilas Bôas

The study analyzes 14 MeV neutron effects on a AlGaN/GaN HEMT, in comparison to 1.25 MeV γ-rays and 10 keV X-rays, highlighting a combined effect between displacement damage (DD) and Total Ionizing Dose (TID).

PD-6

Effect of the Anti-Punchthrough Implant on the Total Ionizing Dose Response of Planar n-MOSFETs

Authors: G. Andreetta(1), G. Borghello(2), F. Faccio(2), S. Gerardin(3), M. Bagatin(1), A. Paccagnella(1), S. Bonaldo(1)

1. University of Padova, Italy, 2. CERN, Switzerland, 3. DEI - Padova University, Italy

Presenting Author: Gabriele Andreetta

This work evidences the key role of anti-punchthrough implants on the TID sensitivity of planar n-MOSFETs. Its implant depth and distribution can significantly affect off-leakage and threshold voltage shifts.

PD-7

Impact of Proton Irradiation on Carbon Nanotube 6-T SRAM Cell

Authors: T. Ren(1), Q. Zheng(1), H. Xu(2), X. Li(1), N. Gao(2), Q. Guo(1), J. Cui(1), Y. Li(1)

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China, 2. Beijing HuaTan YuanXin Electronics Technology Ltd. Co., Beijing, China, China

Presenting Author: Tongfei Ren

The impact of proton irradiation on CNT 6-T SRAM cell and CNTFET is investigated. Unlike previous observations, the SNM variation and the threshold voltage shift exhibit a non-monotonic trend with irradiation fluence.

PD-8

Experimental and Simulation Studies on Threshold Voltage Shift of Carbon Nanotube MOSFET Induced by 60Co Radiation

Authors: N. Cui(1), B. Mei(1), Y. Sun(1), P. Li(1)

1. China Aerospace Components Engineering Center, China

Presenting Author: Naiyuan Cui

This paper investigates the fundamental mechanism of radiation effects in top-gate carbon nanotube (CNT) MOSFET. The effects of Schottky junction contact annealing and total ionizing dose on CNT-based devices are distinctly different.

PD-9

Total Ionizing Dose Effect on CMOS Power Amplifiers for 2.4 GHz Wi-Fi Chipset

Authors: K. Yanaka(1), Y. Narukiyo(1), H. Hans(2), J. Mayeda(3), K. Yuasa(1), S. Kato(1), T. Ota(1), A. Shirane(1)

Presenting Author: Kotaro Yanaka

This paper investigates TID effects on Power Amplifiers (PAs) for 2.4 GHz Wi-Fi chipsets in a reactor containment vessel. Both PAs functioned up to 30 Mrad, with larger-gate-width PAs showing greater performance variation.

PD-10L

SEEs and TID Effects in Digital-to-Time Converters for Fractional-N Phase-Locked Loops

Authors: Q. Ma(1), J. Zhao(2), L. Van der elst(1), P. Leroux(3), J. Prinzie(1)

1. KU Leuven, Belgium, 2. KU Leuven, China, 3. Leuven University, Belgium

Presenting Author: Qichao Ma

This paper investigates how SETs and TID effects degrade the performance of a DTC through laser and X-ray testing. An RTL model is used to study how these degradations impact fractional-N PLLs.

PD-11L

Effects of Displacement Damage on the Structural and Electrical Properties of Ferroelectric Hafnium Zirconium Oxide Capacitors

Authors: S. Jaszewski(1), C. Mckay(2), D. Hughart(2), J. Cain(2), M. Henry(2)

1. Sandia National Laboratories, , 2. Sandia National Laboratories, USA

Presenting Author: Samantha Jaszewski

This study examines the effects of displacement damage on hafnium zirconium oxide capacitors, revealing a dose-dependent degradation in ferroelectric properties and demonstrating the importance of phase control for ferroelectric devices based on this material.

PD-12L

Total Ionizing Dose Sensitivity of 7-nm FinFETs

Authors: M. Gorbunov(1), A. Caglar(2), M. Van de burgwal(2), L. Berti(3), G. Thys(3), T. Schulte(4), J. Vanden berk(4), D. Geys(4)

1. Imec, Belgium, 2. IMEC, Belgium, 3. imec, Belgium, 4. Magics Technologies NV, Belgium

Presenting Author: Maxim Gorbunov

We present the latest results for the total ionizing dose (TID) sensitivity of 7-nm FinFETs. N- and P-FinFETs with various geometries were irradiated up to 300 krad(Si) at three different bias conditions.

ANTWERP
Belgium

29 September- 3 October
2025