POSTER SESSION Wednesday, 1 Oct.

Chairs: Stefano Bonaldo & Serena Rizzolo

Marble Hall

PA-1

Charge collection prediction and analysis in 3nm FinFET using the ambipolar diffusion with a-cutoff model

Authors: S. El hajji(1), G. Gasiot(1), T. Thery(1), V. Correas(1), N. Pieper(2), Y. Xiong(2), J. Kronenberg(2), J. Autran(3), B. Bhuva(2), D. Pandini(4), V. Malherbe(1), P. Roche(1)

1. STMicroelectronics, France, 2. Vanderbilt University, USA, 3. Rennes University, France, 4. STMicroelectronics, Italy

Presenting author: Sayah El Hajji

The ambipolar diffusion with a-cutoff (ADC) model is reviewed and applied to 3nm FinFET flip-flops. Charge collection mechanisms in FinFET are discussed, along with the influence of process and design features.

PA-2

Direct Measurements of Single-Event Burnout Current Induced by Neutron Irradiation in a 1200 V Fast Recovery Diode

Authors: TH. Nakamoto(1), J. Furuta(2), M. Yabuuchi(3), H. Sakamoto(3), R. Nakajima(1), K. Kobayashi(4), M. Sakai(5), S. Kumashiro(3) 1. Kyoto Institute of Technology, Japan, 2. Okayama Prefectural University, Japan, 3. Renesas Electronics Corporation, Japan, 4. Kyoto Institure of Technology, Japan, 5. Gunma University Heavy Ion Medical Center, Japan

Presenting Author: Hikaru Nakamoto

This study presents direct measurements of SEB current in a 1200 V FRD under neutron irradiation. Simulations indicate that incorporating increased charge generation and higher impact ionization improves agreement with experimentally observed current.

PA-3

A Mathematical Model to Identify the Occurrence of Stuck Bits in Radiation-Ground Tests

Authors: F. Franco(1), M. Rezaei(1), J. Fabero(1), H. Mecha(1), A. Colangeli(2), J. Clemente(1)

1. Universidad Complutense de Madrid, Spain, 2. ENEA, Italy

Presenting Author: Francisco J Franco

This abstract presents a mathematical model to estimate the expected number of repeated cells in memories due to single event upsets. Deviations from this model provide an objective criterion for identifying stuck bits.

PA-4

SEU-Resilient Design of 8T SRAM Utilizing Complementary FET (CFET) Technology

Authors: Z. Zhang(1), W. Chen(1), J. Lin(2), L. Cai(1)

1. Sun Yat-Sen University School of Microelectronics Science and Technology, China, 2. Sun Yat-Sen University School of mi, China,

Presenting author: Zhengxin Zhang

This paper proposes an 8T CFET SRAM design that reduces area by 75% compared to FinFET SRAM while achieving an 85.3% reduction in upset cross-section, enhancing radiation tolerance significantly.

PA-5

A Charge-Width Calibration Approach for the Compact Modeling of Single Event Transients

Authors: Z. Li(1), M. Gorbunov(1), H. Caldas kessler(1), G. Franciscatto(1), V. Kampati(2), J. Zhao(2), J. Prinzie(2), L. Berti(1)

1. IMEC, Belgium, 2. KU Leuven, Belgium

Presenting Author: Zheyi Li

This paper introduces a novel calibration methodology for the Single-Event Transient (SET) compact model and offering insights into the underlying charge recombination effects in the charge collection process.

PA-6

Analysis of Shift Phenomena in SEE-Sensitive Nodes within Digital LDO under Clock Frequency Variations

Authors: R. Deng, H. Yuan, T. Li, Y. Chi, X. Chen, S. Liu, Z. Deng

National University of Defense Technology, China

Presenting Author: Ruiqi Deng

The shift phenomenon of SEE sensitive nodes from the shift register to power transistors is first observed in the digital LDO, demonstrating that the sensitive nodes in discrete sampling circuits are dependent on operating conditions.

PA-7

EV SEB failure Rate Modeling based on Neutron SEE Test for SiC MOSFET in SW Mode

Authors: RD. Bae(1), J. Park(2), M. Jo(3), L. Keunwoo(1), K. Kiseog(1), K. Youngboo(1)

1. QRT, Korea, Republic of, 2. Hyundai Motor Company, Korea, Republic of, 3. QRT Inc., Korea, Republic of

Presenting Author: Dongwoo Bae

We modeled EV’s SEB failure rate based on neutron SEE test for SiC MOSFET in switching mode. We found the probability of SEB increase with longer driving distances and higher speeds of EVs.

PA-8L

Burnout susceptibility of silicon power diodes when exposed to 14 MeV neutrons

Authors: G. Canale parola(1), F. Velardi(1), S. Palazzo(2), G. Busatto(1), A. Sanseverino(1), E. Martano(1), S. Alberton(3), J. Wyss(1)

1. University of Cassino and Southern Lazio, Italy, 2. University of Casssino and Southern Lazio, Italy, 3. University of Sao Paulo, Institute of Physics, Brazil

Presenting Author: Giovanni Canale Parola

Low-energy neutrons can lead to significant failures in high-voltage power devices; a novel approach examines the effects of nuclear reaction products from low-energy neutrons inside the device, combining experimental characterization and numerical simulation.

PA-9L

The influence of angular incidence on pulse quenching in sub-20 nm FinFET technology

Authors: J. Yang(1), J. Yang(2), Y. Chi(3), P. Huang(4), R. Sun(4), Y. Jiao(2), Y. Pei(2), T. Ying(5), Y. Wei(2), X. Cui(2), X. Li(2)

1. School of Astronautics and the Technology Innovation Center of Materials and Devices for Extreme Environment, Harbin Institute of Technology, China, 2. School of Materials Science and Engineering and the Technology Innovation Center of Materials and Devices for Extreme Environment, Harbin Institute of Technology, China, 3. Micro-electronics and microprocessor institute, School of Computer, National University of Defense Technology, China, 4. Micro-electronics and microprocessor institute, School of Computer, National University of Defense Technolog, China, 5. School of Physics and the Technology Innovation Center of Materials and Devices for Extreme Environment, Harbin Institute of Technology, China

Presenting Author: Jinhu Yang

The single-event transient pulse quenching effect of sub-20 nm bulk FinFET under different azimuth incident angles was studied by heavy ion experiment.

PB-1

Effect of Temperature on the SEU Cross-Section in a 40-nm SRAM when Exposed to Low-Energy Protons

Authors: P. Martin Holgado, A. Romero Maestre, J. De Martin Hernandez, Y. Morilla Centro Nacional de Aceleradores (CNA), Spain

Presenting author: Pedro Martin Holgado

This work explores the impact of temperature on the SEU cross-sections of a 40-nm SRAM under low-energy proton irradiation. Tests in the PHOENIX chamber show slight temperature-dependent variations with a minimum sensitivity at 0 ºC.

PB-2

Investigation of Neutron-Induced Failures in Commercial SiC Power Devices

Authors: N. Arnold(1), V. Kotagama(1), G. Parkinson(2), K. Niskanen(3), A. Renz(1), P. Gammon(1)

1. University of Warwick, United Kingdom, 2. University of Nottingham, United Kingdom, 3. University of Jyväskylä, Finland

Presenting Author: Niamh Arnold

Accelerated neutron testing was completed on a range of current-market SiC commercial devices in the 650 V and 1.2 kV range, resulting in an appraisal of cosmic ray resilience performance in current market devices.

PB-3

Single Event Transient Evaluation of 7nm FinFET LUT4 Representative of Versal

Authors: A. Urena-acuna(1), L. Artola(1), G. Hubert(1), S. Achaq(2), V. Pouget(3), J. Boch(4), F. Manni(5)

1. ONERA, France, 2. ONERA/IES, France, 3. IES-CNRS, France, 4. Univ Montpellier, France, 5. CNES, France

Presenting Author: Alejandro Urena-Acuna

In this work, we present an evaluation methodology to determine the SET sensitivity through a heavy ion simulated fault injection technique on a LUT4 of the 7nm FinFET AMD Xilinx Versal FPGA

PB-4 withdrawn

Deep Underground Experiment and Simulation of Soft Error Characteristics in 14 nm FinFET and 28 nm SRAMs

Authors: Y. Dong(1), Z. Zhang(2), G. Lu(1)

1. China Electronic Product Reliability and Environmental Testing Research Institute,, China, 2. China Electronic Product Reliability and Environmental Testing Research Institute, China

Presenting author: Zhangang Zhang

Underground SER testing of 14/28nm SRAMs at CJPL recorded 16 errors (18.6% MCUs,max 7 cells) over 862 days. Hard/fake errors observed. High-altitude comparisons reveal Beijing SER trends. Monte Carlo simulations validate alpha-induced charge mechanisms.

PB-5

Investigation on SET Pulse Width Changes in Combinational Logic Circuits by Fault Injections

Authors: T. Yuta(1), T. Nakura(2)

1. Japan Aerospace Exploration Agency, Japan, 2. Fukuoka University, Japan

Presenting Author: Tsuchiya Yuta

We propose a measurement-based technique to investigate changes in Single-Event Transient pulse width caused by pulse propagation effects. The pulse width broadening is comparable to the original SET pulse width at the ion hit position.

PB-6

Static and Dynamic Tests on a 40-nm Commercial SRAM under Muons and Neutrons

Authors: J. Fabero(1), F. Franco(1), H. Mecha(1), M. Rezaei(1), A. Hillier(2), J. Lord(2), S. Cottrell(2), A. Colangeli(3), N. Funnesu(3), G. Pagano(3),
J. Clemente(1)

1. Universidad Complutense de Madrid, Spain, 2. STFC Rutherford Appleton Laboratory, United Kingdom, 3. ENEA, Italy

Presenting Author: Francisco J Franco

The SBU and MCU cross sections for muons and 14-MeV neutrons of a commercial 40-nm CMOS SRAM were experimentally determined in static and dynamic modes. Events are more likely in static mode than in dynamic mode.

PB-7 withdrawn

Investigation of Single-Event Effects Induced by Heavy Ion Irradiation on GaN MMIC Power Amplifiers

Authors: H. Zhang, X. Jian, W. Xiaoqiang, L. Hongwei, T. Rui, J. Xing, W. Bin

China Electronic Product Reliability and Environmental Testing Research Institute, China

Presenting Author: Hao Zhang

This study investigates single-event effects in GaN MMIC power amplifiers, revealing significant performance degradation and single-event burnout in HEMTs and MIM capacitors. Mechanisms include electron trapping and dielectric rupture, confirmed by SEM and simulations.

PB-8

Single Event Effects of Power Bipolar Junction transistors

Authors: JF. Faillace, V. Gupta, B. Thomas, M. Muschitiello, A. Costantino, F. Krimmel, P. Hernandez, P. Heiskanen, F. Tonicello

European Space Agency, Netherlands

Presenting Author: Francesco Faillace

This work investigates the Single Event Effects radiation hardness level of power Bipolar Junction Transistors, with a main focus on Single Event Burnout. Several COTS devices were tested with heavy ions for SEE characterization.

PB-9L

Heavy Ion Induced Single Event Effects in 6.5 kV and 10 kV SiC Power MOSFETs and Comparison to the Depletion Capacitance Energy Model

Authors: S. Islam(1), A. Sengupta(1), D. Ball(1), J. Osheroff(2), K. Galloway(3), A. Witulski(1), S. Kosier(1), R. Schrimpf(1)

1. Vanderbilt University, USA, 2. NASA Goddard Space Flight Center, USA, 3. Vanderbilt university, USA

Presenting Author: Sajal Islam

Heavy ion irradiation of 6.5 kV and 10 kV SiC MOSFETs shows agreement with the depletion capacitance critical energy model. Leakage and failure regions are identified, extending the model’s relevance to high-voltage SiC power devices.

PB-10L

Cumulative and Transient Effects in SELC II of Planar and Trench-Gate SiC Power MOSFETs

Authors: N. Für(1), H. Medeiros(1), M. Belanche guadas(1), A. Erlebach(1), M. Nagel(2), U. Grossner(3)

1. APS - ETH Zürich, Switzerland, 2. APS - ETH Zurch, Switzerland, 3. APS - ETH Zurich, Switzerland

Presenting Author: Natalija Für

Degradation in planar and trench-gate silicon carbide (SiC) power MOSFETs induced by heavy-ion irradiation (SELC II and SEB) has been further characterized and cumulative and transient behavior observed.

PC-1

Degradation Analysis of CMOS Image Sensors under Proton Irradiation for Star Sensor Applications

Authors: K. Li(1), J. Feng(1), L. Wen(1), J. Zhao(2), Y. Li(1)

1. Xinjiang Institute of Physics and Chemistry, Chinese Academy of Sciences, China, 2. KU Leuven, Department of Electrical Engineering, Belgium

Presenting author: Kunfang Li

This paper conducted irradiation experiment of CMOS image sensor with 30MeV protons, and analyzed the degradation for detection and positioning capability of star sensor according to degradation of CIS’s Id, DCNU, QE and hot pixels.

PC-2

Radiation Hardness assessment of a CMOS-TDI Sensor System for Space-Borne Imaging Applications

Authors: G. Hirsch, A. Wirth, X. Amigues, E. Chernyavskiy, A. Eckardt DLR, Germany

Presenting Author: Georg Hirsch

We irradiated a newly developed CMOS TDI sensor system with heavy ions, gamma rays, and protons. Radiation effects, including SEEs and dark current changes, were evaluated. We demonstrated the systems suitability for LEO missions.

PC-3

Nanoscale-Featured Integrated Photonic Devices in Harsh Radiation Environments

Authors: K. Arnold, N. Karom, R. Schrimpf, D. Fleetwood, S. Kosier, R. Reed, S. Weiss Vanderbilt University, USA

Presenting Author: Kellen Arnold

Resilience to ionizing dose and displacement damage is shown for photonic crystals with features <100 nm, foretelling reliable next-generation integrated photonic devices for communications and quantum applications in harsh radiation environments.

PC-4

Radiation Effects on Red, Green and Blue Light Emitting Diodes

Authors: G. Ciachera(1), L. Weninger(1), D. Lambert(2), M. Darnon(1), A. Morana(3), V. Lalucaa(4), J. Belloir(4), C. Durnez(4), C. Virmontois(4), N. Kerboub(4), J. Mekki(4), Y. Morilla(5), P. Martin_holgado(6), A. Romero(6), M. Gaillardin(2), P. Paillet(2), S. Girard(7)

1. Laboratoire Hubert Curien, France, 2. CEA, France, 3. Laboratory Hubert Curien, France, 4. CNES, France, 5. CNA, Spain, 6. Centro Nacional de Aceleradores (CNA), Spain, 7. Université de Saint Etienne, France

Presenting author: Geoffrey Ciachera

We investigate the impact of radiation (protons, gamma) on the electro-optical performances of RGB LEDs. Gamma-radiation up to 100 krad leads to no degradation while 15 MeV protons at different fluences degrade LEDs efficiency.

PC-5L

Novel Silicon Photomultipliers structures for ionizing-radiation effects mitigation

Authors: F. Acerbi(1), L. Parellada monreal(1), A. Gola(2)

1. FBK, Italy, 2. Fondazione Bruno Kessler (FBK), Italy

Presenting author: Fabio Acerbi

We developed new SiPM technologies with improved ionizing radiation hardness. For example, with active trench bias contact, or charge focusing. We tested them with X-rays showing a much better recovery of noise levels after irradiation.

PD-1

Machine Learning Assisted Modeling of Transient Dose Rate and Displacement Synergistic Effect for Circuit Simulation

Authors: L. Jian wen(1), L. Cai(1), W. Chen(1), Z. Zhang(1), W. Chen(2), C. Wang(2), J. Li(2), L. Ding(2), X. Guo(2)

1. the School of Microelectronics Science and Technology, Sun Yat-Sen University, China, 2. the National Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, China

Presenting Author: Lin Jian Wen

This paper proposes a machine learning-based ANN model to efficiently predict synergistic effects of transient dose rate and displacement damage on circuits, enabling accurate SPICE simulations for radiation reliability analysis in complex environments.

PD-2

TID Test of LNAs for Radiation-Tolerant Wireless Communication System Inside Nuclear Reactors

Authors: Y. Narukiyo(1), K. Yanaka(1), H. Hans(2), J. Mayeda(3), K. Yuasa(1), S. Kato(1), T. Ota(1), A. Shirane(1)

1. Institute of Integrated Research, Institute of Science Tokyo, Japan, 2. Institute of Integrated Research, Institute of Science Tokyo, Indonesia, 3. Institute of Integrated Research, Institute of Science Tokyo, USA

Presenting Author: Yasuto Narukiyo

To develop the transceiver for nuclear reactor, three different types of low-noise amplifiers (LNA) in the transceiver were designed for TID test conducted on each LNAs to evaluate their radiation tolerance under 50Mrad.

PD-3

Synergistic Behavior of Photocurrent of SPNP Bipolar Transistor under Sequential Pulsed γ-ray and Pulsed Neutron Irradiation

Authors: C. Wang(1), W. Chen(1), R. Li(1), J. Li(1), X. Guo(1), L. Ding(1), W. Ma(1)

1. National Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, China

Presenting Author: Chenhui Wang

Synergistic behavior of SPNP’s photocurrent under sequential pulsed γ-ray and neutron irradiation is explored taking into account the influence of transient ionizing damage caused by pulsed neutron, and new significant features of photocurrent are discovered.

PD-4

Displacement Damage Equivalence in GaN PIN Diodes: DPA Correlation in Proton, Neutron, and Heavy-Ion Irradiation Environment

Authors: Y. Xue(1), L. Ding(2)1)

1. Nrthwest Institute of Nuclear Technology, China, 2. Northwest Institute of Nuclear Technology, China

Presenting Author: Yuanyuan Xue

This study focuses on GaN PIN diodes, systematically conducting irradiation experiments with protons, neutrons, and low-, medium-, and high-energy heavy ions to investigate the impact of different types and energy particles on device electrical parameters.

PD-5

Unveiling Synergistic Radiation Effects in AlGaN/GaN HEMTs: A Comparative Study

Authors: A. Vilas bôas(1), S. Alberton(2), P. Garcia(1), N. Medina(3), V. Aguiar(4), R. Giacomini(1), T. Cavalcante(5), L. Seixas(6), F. Saulo(6), F. Palomo_pinto(7), M. Guazzelli(8)

1. FEI, Brazil, 2. University of Sao Paulo, Institute of Physics, Brazil, 3. Instituto de Física da Universidade de São Paulo, Brazil, 4. University of Sao Paulo, Brazil, 5. Instituto de Estudos Avançados (IEAv), Brazil, 6. CTI, Brazil, 7. Universidad de Sevilla, Spain, 8. Centro Universitário FEI, Brazil

Presenting Author: Alexis Cristiano Vilas Bôas

The study analyzes 14 MeV neutron effects on a AlGaN/GaN HEMT, in comparison to 1.25 MeV γ-rays and 10 keV X-rays, highlighting a combined effect between displacement damage (DD) and Total Ionizing Dose (TID).

PD-6

Effect of the Anti-Punchthrough Implant on the Total Ionizing Dose Response of Planar n-MOSFETs

Authors: G. Andreetta(1), G. Borghello(2), F. Faccio(2), S. Gerardin(3), M. Bagatin(1), A. Paccagnella(1), S. Bonaldo(1)

1. University of Padova, Italy, 2. CERN, Switzerland, 3. DEI - Padova University, Italy

Presenting Author: Gabriele Andreetta

This work evidences the key role of anti-punchthrough implants on the TID sensitivity of planar n-MOSFETs. Its implant depth and distribution can significantly affect off-leakage and threshold voltage shifts.

PD-7

Impact of Proton Irradiation on Carbon Nanotube 6-T SRAM Cell

Authors: T. Ren(1), Q. Zheng(1), H. Xu(2), X. Li(1), N. Gao(2), Q. Guo(1), J. Cui(1), Y. Li(1)

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China, 2. Beijing HuaTan YuanXin Electronics Technology Ltd. Co., Beijing, China, China

Presenting Author: Tongfei Ren

The impact of proton irradiation on CNT 6-T SRAM cell and CNTFET is investigated. Unlike previous observations, the SNM variation and the threshold voltage shift exhibit a non-monotonic trend with irradiation fluence.

PD-8

Experimental and Simulation Studies on Threshold Voltage Shift of Carbon Nanotube MOSFET Induced by 60Co Radiation

Authors: N. Cui(1), B. Mei(1), Y. Sun(1), P. Li(1)

1. China Aerospace Components Engineering Center, China

Presenting Author: Naiyuan Cui

This paper investigates the fundamental mechanism of radiation effects in top-gate carbon nanotube (CNT) MOSFET. The effects of Schottky junction contact annealing and total ionizing dose on CNT-based devices are distinctly different.

PD-9

Total Ionizing Dose Effect on CMOS Power Amplifiers for 2.4 GHz Wi-Fi Chipset

Authors: K. Yanaka(1), Y. Narukiyo(1), H. Hans(2), J. Mayeda(3), K. Yuasa(1), S. Kato(1), T. Ota(1), A. Shirane(1)

Presenting Author: Kotaro Yanaka

This paper investigates TID effects on Power Amplifiers (PAs) for 2.4 GHz Wi-Fi chipsets in a reactor containment vessel. Both PAs functioned up to 30 Mrad, with larger-gate-width PAs showing greater performance variation.

PD-10L

SEEs and TID Effects in Digital-to-Time Converters for Fractional-N Phase-Locked Loops

Authors: Q. Ma(1), J. Zhao(2), L. Van der elst(1), P. Leroux(3), J. Prinzie(1)

1. KU Leuven, Belgium, 2. KU Leuven, China, 3. Leuven University, Belgium

Presenting Author: Qichao Ma

This paper investigates how SETs and TID effects degrade the performance of a DTC through laser and X-ray testing. An RTL model is used to study how these degradations impact fractional-N PLLs.

PD-11L

Effects of Displacement Damage on the Structural and Electrical Properties of Ferroelectric Hafnium Zirconium Oxide Capacitors

Authors: S. Jaszewski(1), C. Mckay(2), D. Hughart(2), J. Cain(2), M. Henry(2)

1. Sandia National Laboratories, , 2. Sandia National Laboratories, USA

Presenting Author: Samantha Jaszewski

This study examines the effects of displacement damage on hafnium zirconium oxide capacitors, revealing a dose-dependent degradation in ferroelectric properties and demonstrating the importance of phase control for ferroelectric devices based on this material.

PD-12L

Total Ionizing Dose Sensitivity of 7-nm FinFETs

Authors: M. Gorbunov(1), A. Caglar(2), M. Van de burgwal(2), L. Berti(3), G. Thys(3), T. Schulte(4), J. Vanden berk(4), D. Geys(4)

1. Imec, Belgium, 2. IMEC, Belgium, 3. imec, Belgium, 4. Magics Technologies NV, Belgium

Presenting Author: Maxim Gorbunov

We present the latest results for the total ionizing dose (TID) sensitivity of 7-nm FinFETs. N- and P-FinFETs with various geometries were irradiated up to 300 krad(Si) at three different bias conditions.

PE-1

Rust vs. C: Evaluating Soft Error Sensitivity

Authors: A. Martinez_alvarez(1), D. Gonzalez montesoro(1), R. Bastos(2), S. Cuenca-asensi(1), A. Serrano-cases(1)

1. University of Alicante, Spain, 2. Univ. Grenoble Alpes / TIMA laboratory, France

Presenting author: Sergio Cuenca-Asensi

This paper evaluates Rust as an alternative to C for developing reliable applications in radiation-prone environments. Despite its memory safety mechanisms, Rust outperforms C in SDC cross-section under radiation, suggesting enhanced reliability in such conditions

PE-2

Impact of Atmospheric Neutrons on Semantic Segmentation Correctness

Authors: B. Coelho(1), M. Saveriano(1), C. Frost(2), P. Rech(1)

1. University of Trento, Italy, 2. ISIS Neutron and Muon Facility, United Kingdom

Presenting author: Bruno Coelho

We test semantic segmentation models on TPUs and observe tolerable, mild, and critical mispredictions. We correlate errors with raw corrupted output and input image characteristics, showing that even few corrupted pixels can drastically change classifications.

PE-3

Comparative Analysis of Software Redundancy on RISC-V architecture: Bare-metal vs Linux

Authors: S. Cuenca-asensi(1), E. Abma romero(1), M. Ijzelendoorn(1), P. Martin_holgado(2), A. Serrano(3), A. Martinez_alvarez(1)

1. University of Alicante, Spain, 2. Centro Nacional de Aceleradores (CNA), Spain, 3. Alicante University, Spain

Presenting author: Sergio Cuenca-Asensi

Fault-tolerance techniques were evaluated under proton irradiation on a RISC-V SoC. Results reveal consistent SDC and SEFI cross-sections across software stacks, with higher SEFI sensitivity in Linux, and emphasize cache optimizations' relevance to reliability.

PE-4

A Lockstep-based Solution for a Radiation-Resilient RISC-V FPGA-Based Architecture

Authors: H. Closquinet(1), F. Miller(2), L. Noizette(2), Y. Helen(3), P. Girard(4), T. Vayssade(5), A. Virazel(5)

1. LIRMM / Nucletudes, France, 2. Nucletudes, France, 3. DGA, France, 4. CNRS, France, 5. LIRMM, France

Presenting author: Hugo Closquinet

This paper presents a RISC-V architecture that implements redundancy by Lockstep. This method ensures an efficient fault detection and correction in harsh environments while optimizing resources usage. Fault injection through emulation has validated this approach.

PE-5

AI-Driven Anomaly Detection in Satellite Telemetry for Space Mission Assurance

Authors: F. Buccellato(1), D. Nicolini(1), E. Vacca(1), L. Sterpone(1)

1. Politecnico di Torino, Italy

Presenting author: Federico Buccellato

We present a data-driven anomaly detection framework for satellite telemetry, enhancing space mission assurance by identifying faults without labeled data, enabling early detection and increased reliability in dynamic orbital environments.

PE-6L

Radiation Heavy-Ion Fault Analysis of URSA: a Reconfigurable Systolic Array for CNN Acceleration in SRAM-based APSoC

Authors: U. Maffazioli(1), F. Limakastensmidt(1), F. Benevenuti(2)

1. UFRGS, Brazil, 2. Universidade Federal do Rio Grande do Sul, Brazil

Presenting author: Ulisses Maffazioli

This work presents a fault-tolerant reconfigurable SA for CNN inference in SRAM-based APSoCs. We evaluate trade-offs in performance, area, and reliability. Radiation experiments validate reliability improvements from array sizing, memory configurations, hardware redundancy, and scrubbing.

PE-7L

Single Event Upset Effects on Deep Neural Networks: A Model and Dataset-Level Perspective

Authors: P. Trevor(1), D. Loveless(1)

1. Indiana University, USA

Presenting author: Peyton Trevor

This study systematically evaluates single-bit upset resilience in over 47 CNNs fine-tuned on remote sensing data, revealing per-architecture and per-sample vulnerability variation and underscoring the importance of model and input-specific robustness in radiation-prone applications.

PE-8L

Reliability Assessment of Fault-Tolerant ZynqNet AI Accelerators in SRAM-Based APSoC

Authors: E. Marañon(1), F. Benevenuti(1), F. Kastensmidt(1)

1. UFRGS, Brazil

This work presents a reliability and area trade-off analysis of fault-tolerant ZynqNet AI accelerator designs running a 4-layer CNN model trained on the SAT-6 dataset, validated through emulated fault injection and heavy-ion irradiation tests.

PF-1

A Timing-Slack-Driven Hardening Method for Single-Event Effects Mitigation Without Circuit Performance Degradation

Authors: R. Song(1), C. Hu(1), J. Shao(1), Y. Chi(1), B. Liu(1), B. Liang(1), J. Chen(1), Z. Wu(1)

1. National University of Defense Technology, China

Presenting author: Ruiqiang Song

The proposed method replaces commercial flip-flops with hardened flip-flops or inserts filter instances based on timing slack values. Experimental results demonstrate that the proposed method enhances tolerance to single-event effects without degrading circuit performance.

PF-2

Enhancing SEL Immunity in Commercial Technology for Aerospace Applications through Process-Based Solutions

Authors: L. Montagner(1), D. Truyen(2), J. Wong(3), E. Leduc(2)

1. Microchip Technology Rousset, France, 2. Microchip Technology, France, 3. Microchip Technology, USA

Presenting author: Laurence Montagner

We developed a method to harden 0.18µm commercial technology against SEL for aerospace applications. TCAD simulations guided process-based solutions, implemented and validated through heavy-ion testing on test vehicles, confirming the complete elimination of SEL vulnerabilities.

PF-3

Hardened Logic Cells Against Soft Errors with 3.75x10^{-8} cm^{2} Cross-section for Combinational Circuits in 28nm CMOS Process

Authors: Y. Li(1), C. Chen(2), J. Zhang(1), B. Zhang(1), F. Lang(1), Y. Hu(1), W. Zhan(3), X. Zeng(1)

1. State Key Laboratory of Integrated Chips and Systems, Fudan University, China, 2. State Key Laboratory of Integrated Chips and Systems, Fudan University, China, 3. Anqing Normal University, China

Presenting author: Yan Li

This paper proposes SFOL, a low-cost hardening technique for combinational cells that filters transients and suppresses SETs. Fabricated in 28nm CMOS, SFOL reduces SET pulses by 96% and cross-section by 4x compared to standard cells.

PF-4

Irradiation Hardening of p-GaN HEMT Based on AlN Polarization Regulation Mechanism

Authors: W. Fan(1), J. Qiu(2), W. Huang(3), J. Shen(2), D. Zhang(1)

1. Fudan University, China, 2. China Resources Microelectronics (Chongqing) Limited, China, 3. Jiangnan University, China

Presenting author: Wenqi Fan

AlN polarization in post-irradiation HEMT can enhance the GaN layer charge sharing and suppress DIBL effect. Gate carrier transport model is proposed to reveal that AlN reduces irradiated traps and has an effective irradiation-hardening ability.

PF-5

Leveraging Tap Cell as a Soft Error Mitigation Method for Advanced CMOS Combinational Circuits without Additional Area Overhead

Authors: C. Zhang(1), C. Chen(2), F. He(1), H. Yin(1), Y. Li(1), X. Zeng(1)

1. State Key Laboratory of Integrated Chips and Systems, Fudan University, China, 2. State Key Laboratory of Integrated Chips and Systems, Fudan University, China

Presenting author: Chenyu Zhang

This paper proposes a layout-level tap cell placement method to mitigate SET in combinational circuits, achieving 5–11% SER reduction with no area overhead and minimal power and delay impact.

PG-1

Universal Approach to Measuring Focused Beam Size for Pulsed-Laser SEE Testing

Authors: T. Crane(1), J. Hales(1), A. Ildefonso(2), D. Mcmorrow(1)

1. U.S. Naval Research Laboratory, USA, 2. Indiana University, USA

Presenting author: Trevor Crane

The single-event effect response induced by pulsed-laser testing depends strongly on the focused beam size. This work presents a universal approach for accurately measuring this focused beam size aimed at improving repeatability and traceability.

PG-2

New Fusion Linear Accelerator for Radiation Effects (FLARE) 14 MeV Steady State Neutron Testing Facility and Potential Use Cases

Authors: S. Burger(1), G. Becerra(1)

1. SHINE Technologies, LLC, USA

Presenting author: Gabriel Becerra

SHINE Technologies has conducted multiple radiation effects tests since late 2023 with customers to demonstrate functionality and collect data at FLARE, its new 14 MeV fusion neutron radiation testing facility.

PG-3

Timepix3 and silicon diode measurements at the AmBe neutron source at CERN, and their comparison with Monte Carlo simulations

Authors: D. Prelipcean(1), G. Lerner(1), R. Garcia(1)

1. CERN, Switzerland

Presenting author: Daniel Prelipcean

The neutron induced event-by-event energy deposition in a Timepix3 and a silicon diode detector is investigated using an AmBe source, and compared with Monte Carlo simulations performed with the FLUKA.CERN and G4SEE codes.

PG-4

A Compact Silicon Pixel System for Particle Detection for Space Radiation Dosimetry

Authors: V. Yeroshenko(1), F. Bezerra(2), M. Kachel(3), R. Sefri(3), J. Baudot(3), F. Morel(3), S. Callier(1), A. Perdon(1), J. Fleury(1)

1. Weeroc, France, 2. CNES, France, 3. IPHC, France

Presenting author: Vsevolod Yeroshenko

We developed a compact CubeSat format device based on Monolithic Imager CMOS Monolithic Active Pixel Sensor technology. It is aimed at measuring the dose and identifying the type of radiation in the space environment.

PG-5

RADFET- dosimeter as dose rate measurement tool

Authors: B. Podlepetsky(1), A. Rodin(2), A. Zhukov(2)

1. MEPhI, Russian Federation, 2. NRNU MEPHI, Russian Federation

Presenting author: Boris Podlepetsky

The possibilities of using n-channel MOSFET (called aRADFET) to measure the dose rate of ionizing radiation were investigated. Compact electro-physical models were proposed to interpret obtained results.

PG-6

Irradiation Research at HZB: Current Capabilities and Future Potential

Authors: A. Dittwald(1), J. Bundesmann(1), A. Denker(1), G. Kourkafas(1), T. Fanselow(1)

1. Helmholtz-Zentrum Berlin für Materialien und Energie, Germany

Presenting author: Alina Dittwald

HZB provides proton irradiation with flexible time structure up to 68 MeV, scattered (40 mm) and focused beam, intensities up to 10*e13 p/cm^2 at several target stations and gamma irradiation up to 10 krad/h (H2O)

PG-7

Validation of the ICPO medical 194 MeV proton line for radiation testing of electronic devices

Authors: F. Bezerra(1), A. Bonfrate(2), A. Patriarca(2), R. Ferrand(2), L. De marzi(2), N. Kerboub(1), J. Mekki(1)

1. CNES, France, 2. Institut Curie, France

Presenting author: Francoise Bezerra

The 194 MeV proton line located at ICPO, proton-therapy center near Paris was recently validated for radiation testing of electronic devices by CNES, the French space agency. Beam characteristics, dosimetry and validation results are presented.

PG-8L

Facility intercomparison towards reliable very-high-energy heavy ion dosimetry for space electronics testing at CERN

Authors: N. Emriskova(1), A. Waets(1), R. Garcia alia(1)

1. CERN, Switzerland

Presenting author: Natalia Emriskova

A benchmark dosimetry method using silicon diode measurements and FLUKA simulations was applied across very-high-energy heavy ion facilities to enable intercomparison and support the development of the emerging CERN beam line for space electronics testing.

PG-9L

Ultracompact platform for radiation testing of electronics via laser-accelerated high energy electrons

Authors: S. Milton(1), C. Neacsu(1), B. Hegelich(1)

1. TAU Systems, USA

Presenting author: Catalin C. Neacsu

We report on electron-based SEE-testing of electronics, where purposefully prepared electron packets mimic heavy ions. This compact platform accesses independently controllable high-LETs and -ranges for µm-accurate testing, offering a viable alternative to large ion facilities.

PG-10L

The proton and heavy ion irradiation facility at UMCG-PARTREC

Authors: B. Jones(1), A. Gerbershagen(2), H. Kremers(1), M. Goethem(2)

1. Particle Therapy Research Center (PARTREC), Biomedical Sciences Department, University Medical Center Groningen, University of Groningen, Netherlands, 2. Particle Therapy Research Center (PARTREC), Department of Radiation Oncology, University Medical Center Groningen, University of Groningen, Netherlands

Presenting author: Brian Nathaniel Jones

The specifications of the irradiation facility for up to 190 MeV protons and heavy ions up to xenon at 30 MeV/u for radiation harness testing in air at UMCG-PARTREC will be presented.

PH-1

Charge Collection in Solid State Detector: 2D Solver Extension for Semiconductor System

Authors: P. Caron(1), Q. Gibaru(1), M. Chabot(2), E. Rauly(2), V. Bolin(1), G. Gourves(1), J. Guerard(1), S. Bourdarie(1)

1. ONERA, France, 2. IJClab, France

Presenting author: Pablo Caron

In continuation of previous studies on the use of transients as a means of particle identification, this study explores the limits of 2D simulations and propose an extension of the equations to overcome these limitations.

PH-2

Towards Single Trap Monitoring in MOSFET Total Ionizing Dose Effects

Authors: A. Michalowskaforsyth(1), S. Ramazanoglu(1)

1. Graz University of Technology, Austria

Presenting author: Alicja Michalowska Forsyth

We present TID experiment with continuous frequency monitoring in a custom ring oscillator dedicated to study CMOS random-telegraph-noise. Analysis reveals discrete step-like events, suggesting observation of individual trapping/detrapping occurrences. Step-up events dominate pre-rebound, step-down after.

PH-3

Impact of P₂O₅ and N₂ Annealing on the TID Response of 4H-SiC Gate Oxides for space applications

Authors: V. Kotagama(1), R. Arne(1), M. Yildirim(1), N. Iosifidis(1), N. Arnold(1), V. Kilchytska(2), D. Flandre(2), V. Shah(1), M. Antoniou(1), P. Gammon(1)

1. University of Warwick, United Kingdom, 2. Universite Catholique de Louvain, Belgium

Presenting author: Virendra Malin Kotagama

The TID response of 4H-SiC MOSCAPs with thermal and ALD oxides is evaluated under Co-60 irradiation. A 30-minute P₂O₅ annealed oxide shows exceptional immunity, with minimal flatband voltage shift and density of interface states deviation.

PH-4

Comparative Analysis of SEGR and SEB Susceptibility in Si and SiC MOSFETs Using TCAD Modeling

Authors: C. Marques(1), A. Michez(2), T. Labau(1), R. Germanicus(3), F. Wrobel(2)

1. Delphea, France, 2. Université de Montpellier - IES, France, 3. CRISMAT LAMIPS, France

Presenting author: Cleiton Marques

This work compares Si and SiC VDMOSFETs under heavy-ion irradiation using TCAD simulations. Results reveal that SiC devices exhibit greater sensitivity to SEGR and SEB compared to their Si counterparts.

PH-5

Gate Oxide Degradation Mechanism Induced by Heavy Ion in SiC MOSFETs

Authors: Y. Xiao(1), L. Chaoming(1), Z. Jiaming(1), W. Tianqi(1), Q. Chunhua(1), H. Mingxue(1)

1. Harbin Institute of Technology, China

Presenting author: Yiping Xiao

This paper demonstrates a sequential degradation mechanism in the oxide, progressing from latent damages to microdose, and ultimately to the formation of microbreak, which is related to the initial ion-induced damage exacerbated under subsequent strikes.

PI-1

Safe Avionics Reuse Through Mission-Specific Radiation Modeling

Authors: E. Vacca(1), A. Cui(1), S. Azimi(1), L. Sterpone(1), M. Cardi(2), F. Parigi(2), M. Pavoni(2), D. Calvi(2), A. Zanotti(2), F. Corradino(2), E. Sanguineti(2), F. Nichele(3), F. Perez lissi(4), P. Martino(4), I. Carnelli(4)

1. Politecnico di Torino, Italy, 2. Tyvak International srl, Italy, 3. Tyvak International, Italy, 4. European Space Agency, Netherlands

Presenting author: Eleonora Vacca

We assess reusing HERA CubeSat avionics for the upcoming RAMSES mission to Apophis by simulating radiation exposure on the CubeSat structure with GEANT4, through a mission-specific radiation environment analysis.

PI-2

Potential Feasibility of Using Deposition Energy Spectra from In-Flight Single-Layer Silicon Detectors for SEE Rate Estimation

Authors: J. Wang(1), X. Zhu(1), G. Shen(1), B. Yuan(1), C. Wang(1), X. Xu(1), L. Zhang(1), Y. Ma(1)

1. National Space Science Center, Chinese Academy of Sciences, China

Presenting author: Jieyi Wang

In-flight single-layer silicon detectors on M15 and M16 satellites recorded deposition energy spectra, where SEE-silicon spectrum differences arise from geometric chord-length effects, enabling single-area silicon detectors to estimate SEE rates.

PI-3

Particle Environment Measured On-Board SVOM during First Year at Low Earth Orbit

Authors: A. Claret(1), L. Bouchet(2), O. Godet(2), S. Schanne(1)

1. CEA, France, 2. IRAP, France

Presenting author: Arnaud Claret

This paper presents the in-flight feedback from the Sino-French SVOM (Space based Variable Object Monitor) space mission from the point of view of the South Atlantic Anomaly intercepted in LEO orbit at 625 km.

PI-4

Space Radiation Monitor Response Functions Construction: Satellite Geometry Guidelines

Authors: R. Bocherens(1), P. Caron(1), S. Bourdarie(1), A. Woelffle(2)

1. Onera, France, 2. DGA, France

Presenting author: Remi Bocherens

IReconstructing particle fluxes in radiation belts requires in-flight measurements and the detector's response function. Since satellite geometries are often confidential, this study proposes guidelines for using degraded geometries to preserve the quality of reconstructed data.

PI-5

Monte Carlo Magneto-Atmospheric Package for SEP and GCR Atmospheric Showers

Authors: L. Favier(1), F. Miller(2), P. Laurent(3)

11. AIM CEA-IRFU / Nucletudes, France, 2. Nucletudes, France, 3. AIM CEA-IRFU, France

Presenting author: Leo Favier

A Magneto-atmospheric Monte-Carlo simulation package is developed to simulate the propagation of Solar Energetic Particles and Galactic Cosmic Rays from the exosphere to the ground to calculate prompt and albedo particle fluxes, and energy spectra.

J1

Ensuring Compliance to Low Cross-Section Destructive SEEs in Particle Accelerator Control System Production Batches: A Large-Sample Testing Approach

Authors: R. Ferraro(1), A. Zimmaro(1), A. Scialdone(2), G. Foucard(1), S. Danzeca(3), A. Masi(3)

1. CERN, France, 2. CERN, Italy, 3. CERN, Switzerland

Presenting author: Rudy Ferraro

This paper addresses the qualification of control system electronics for destructive Single Event Effects in the CERN accelerator complex, linking environmental constraints and failure rate targets to define test levels for production batch compliance.

PJ-1

Using hardware environment emulation and laser testing for early SEE evaluation of an FPGA design

Authors: I. Colin(1), V. Pouget(2), F. Wrobel(3), P. Lamberbourg(4), G. Prévond(4), A. De bibikoff(4)

1. Safran Data Systems & Montpellier University, France, 2. IES-CNRS, France, 3. Universite Montpellier, France, 4. Safran Data Systems, France

Presenting author: Ismael Colin

We evaluate a method for early SEE evaluation of an FPGA design based on embedded emulation of hardware environment combined with laser testing. Influence of laser scanning parameters on the observed event ratios is explored.

PJ-2

System-Level Risk Assessment for Single-Event Latchup Based on Historical Data

Authors: R. Ladbury(1), M. Joplin(2)

1. NASA GSFC, USA, 2. NASA Goddard Space Flight Center, USA

Presenting author: Raymond Ladbury

A flexible system risk analysis tool based on historical SEL data allows assessment of design and testing strategies even at very early stages. The analysis can be refined as test data become available.

PJ-3

Stochastic Worst-Case Test Vectors for ASIC Devices in Single Event Environment

Authors: A. Abou-auf(1), M. Abdelrazik(1), M. Mahmoud(2), A. Ibrahim(1), M. Wael(1)

1. The American University in Cairo, Egypt, 2. Cairo Univeristy, Egypt

Presenting author: Ahmed Abou-Auf

A novel stochastic algorithm to identify worst-case vectors in ASIC devices under a single event environment. This new approach utilizes a novel methodology to determine probability of failure in ASICs under a single event environment

PJ-4

Complementary single event evaluation method that combines pulse−laser and heavy−ion results for radiation hardness verification of space COTS upscreen

Authors: H. Lee(1)

1. QRT Inc, Korea, Republic of

Presenting author: Hyeokjae Lee

In this article, we present a new evaluation method called the complementary single event evaluation method, which hybridizes pulse-laser and heavy-ion test results for radiation hardness with space COTS up-screen.