DATA WORKSHOP

Chairs: Alexandre Rousset & Amor Romero - Maestre

Marble Hall

DW-1

Single Event Effects on a Dual Narrow-Band and Wideband RF Agile Transceiver

Authors: J. Budroweit(1), F. Stehle(1), F. Eichstaedt(1)

1. DLR e.V., Germany

Presenting author: Jan Budroweit

Heavy-Ion induced single event effects (SEE) test results of the latest highly integrated and radio frequency (RF) agile dual-band and wideband transceiver, the Analog Devices ADRV9002, are presented.

DW-2

X-Ray Impact on Analog References in 110 nm ST BCD9s Technology

Authors: A. Benfante(1), D. Crippa(1), A. Veggetti(1), S. Mattiazzo(2), M. Bagatin(2), S. Gerardin(2)

1. STMicroelectronics, Italy, 2. University of Padova, Italy

Presenting author: Dennis Crippa

In this work, we investigate the Total Ionizing Dose response under X-ray of voltage and current analog references manufactured in ST 110 nm BCD9s technology platform. Drift of main parameters has been quantified and analyzed.

DW-3

Temperature Dependence of High Dose Rate Silicon Diode Gamma Detectors

Authors: K. Stoev(1), E. Simova(2)

1. CNL, Canada, 2. Canadian Nuclear Laboratories, Canada

Presenting author: Krassimir Stoev

Small diode-based gamma radiation sensors, developed at Canadian Nuclear Laboratories, are used for measuring high dose-rate gamma fields. Current work presents characterization of such devices over temperature range to 80 °C at different gamma dose-rates.

DW-4

Design and Radiation Qualification of a New User Interface for the LHC Beam Interlock System

Authors: R. Secondo(1), A. Colinet(1), S. Danzeca(1), R. Ferraro(1), G. Foucard(1), G. Lerner(1), C. Martin(1), I. Romera ramirez(1), J. Uythoven(1)

1. CERN, Switzerland

Presenting author: Raffaello SECONDO

The new BIS User Interface (CIBUv2) was qualified in radiation. Components were tested with focused protons, before a system level validation at CHARM. The results confirmed reliability and readiness for operation in a HL-LHC environment.

DW-5 withdrawn

Heavy-ion Single Event Effects Characterization of the HMC438 Divide-by-5 Static Divider

Authors: R. Dungan(1), A. Gazdzhyan(1), J. Ng(1), T. Tran(1), W. Fischer(1), F. Medrano(1), R. Oviedo(1)

1. Northrop Grumman, USA

Presenting author: Rutger Dungan

The HMC438 divide-by-5 static divider was tested for single event effects using heavy-ion irradiation. Cross sections were determined over a range of LET values. Weibull fits were made to the data and SEE rates determined.

DW-6

Radiation Evaluation of the TPS7H1121-SP Radiation-Hardened 2.25V to 14V Input, 2A Low Dropout (LDO) Linear Regulator

Authors: A. Marinelarena(1), M. Trevino(1), T. Lew(1)

1. Texas Instruments, USA

Presenting author: Anthony Marinelarena

Single Events Effects characterization and Total Ionizing Dose results for the TPS7H1121-SP Low Dropout (LDO) Linear Regulator is summarized, showing very robust SEE performance up to LETEFF=75MeV-cm2/mg and excellent TID performance up to 100krad(Si).

DW-7

Qualification of Gallium-Nitride High Electron Mobility Transistors for the 10 MHz Radio-Frequency systems in the CERN Proton Synchrotron

Authors: G. Gnemmi(1), C. Ohmori(2), S. Energico(3), M. Paoluzzi(3), C. Rossi(3), S. Ramberger(3)

1. , Switzerland, 2. KEK, Japan, 3. CERN, Switzerland

Presenting author: Giulia Gnemmi

CERN’s 10 MHz RF system in the Proton Synchrotron will be upgraded with a solid-state GaN driver, replacing obsolete RF tube amplifiers. Radiation qualification is essential to ensure reliable operation in harsh accelerator environments

DW-8

Heavy ion Single Event Effect Tests of Commercial-off-the-shelf components

Authors: M. Steffens(1), S. Hoeffgen(1), J. Kuhnhenn(1), F. Siebert(1), A. Zentgraf(1), G. Furano(2), M. Poizat(3), M. Tali(3)

1. Fraunhofer INT, Germany, 2. ESA/TEC-EDD, Netherlands, 3. ESA, Netherlands

Presenting author: Michael Steffens

This paper presents SEE results with heavy ions on COTS components. The DUTs are from various device families ranging from a voltage reference to a highly integrated GaN FET power stage with integrated gate driver.

DW-9

Evaluation of LGAD Performance Degradation due to TID Aging Under 10 keV X-ray Irradiation

Authors: T. Silva(1), A. Vilas bôas(2), F. Palomo_pinto(3), M. Pavanello(1), R. Giacomini(1), N. Medina(4), M. Guazzelli(5)

1. FEI, Brazil, 2. FEI - Fundação Educacional Inaciana "Padre Sabóia de Medeiros", Brazil, 3. Universidad de Sevilla, Spain, 4. Instituto de Física da Universidade de São Paulo, Brazil, 5. Centro Universitário FEI, Brazil

Presenting author: Thalia Silva

This study evaluates the impact of 10 keV X-ray TID on LGAD's robustness. Beyond 91 krad(Si), significant electrical degradation leads to irreversible damage and charge multiplication loss, compromising device performance.

DW-10

Radiation Characterization of a LEON5FT-based SoC on the DARE65T Platform

Authors: L. Tambara(1), M. Gorbunov(2), M. Van de burgwal(2), L. Berti(3), J. Hellström(1), A. Oliveira(1), J. Andersson nerén(1)

1. Frontgrade Gaisler AB, Sweden, 2. Imec, Belgium, 3. imec, Belgium

Presenting author: Lucas Tambara

This work presents the radiation characterization of a Frontgrade Gaisler’s LEON5FT-based SoC implemented on Imec’s DARE65T platform. Results show the effectiveness of both the platform and the processor’s fault tolerance in handling radiation-induced effects.

DW-11

Total Ionizing Dose and SEE Testing of the TPS7H4012-SP and TPS7H4013-SP 14V Synchronous Buck Converter

Authors: K. Rakos(1), A. Marinelarena(1)

1. Texas Instruments, USA

Presenting author: Kyle Rakos

Texas Instruments tests and discusses single-event effects and total ionizing dose of the TPS7H4012-SP and TPS7H4013-SP family of radiation-hardened, plastic package, 14V, synchronous buck converters optimized for use in a space environment.

DW-12

SEE characterization for a 12.8GHz &10 bits ADC used in real and in I/Q mode

Authors: O. Bonnet(1), S. Renane(1), A. Dezzani(1), H. Barneoud(1), F. Malou(2), N. Kerboub(2), J. Mekki(2)

1. Teledyne e2v, France, 2. CNES, France

Presenting author: Olivier Bonnet

The device tested during these two SEE campaigns is a 10-bit single channel ADC capable of Ka-band operation. SEL, SEFI and SEU were performed during this SEE campaign up to a LET of 94MeV.

DW-13 withdrawn

Investigation of TID Effects on COTS PN and PiN Photodiodes with Impedance Spectroscopy

Authors: P. Casolaro(1), V. Izzo(2), R. Vari(2), C. Principe(2), A. Vanzanella(2), A. Imtiaz(3), A. Aloisio(1)

1. University of Naples Federico II, Italy, 2. National Institute for Nuclear Physics (INFN), Italy, 3. University of Padua, Italy

Presenting author: Pierluigi Casolaro

Impedance spectroscopy modeling and techniques were used to investigate TID effects in COTS photodiodes. The analysis revealed distinct time constants and radiation-induced changes, highlighting the value of impedance spectroscopy for characterizing devices under TID irradiation.

DW-14

VSC8574RT - Microchip - Quad Port, Dual Media Gigabit Ethernet PHY Single Event Effects & Total Ionizing Dose performances

Authors: B. Treuillard(1), G. Bourgcazan(2), J. Bernard(3), V. Beranger(3), K. De saint jan(1), L. Montagner(4), P. Fournier(4), F. Malou(5), D. Dangla(5)

1. Microchip Technology Nantes, France, 2. Microchip, France, 3. Microchip Technology, France, 4. Microchip Technology Rousset, France, 5. CNES, France

Presenting author: Benjamin TREUILLARD

This paper reports the results of Single Event Effects (SEE) and Total Ionizing Dose (TID) test campaigns conducted by Microchip on VSC8574RT Quad Port, Dual Media Gigabit Ethernet PHY.

DW-15

Study of SEE and TID effects According to the Development of NAND Technology

Authors: W. Kim(1)

1. QRT, Korea, Republic of

Presenting author: Woongki Kim

This paper shows the difference to SEE and TID according to the development of NAND devices. It was confimed that the SEE and TID characteristics were depended on decoder are and technology of NAND.

DW-16 withdrawn

High-Resolution Space Radiation Monitoring in LEO Orbit Onboard JoeySat for Radiation Effects Studies and Space Weather Research

Authors: C. Granja(1), J. Jakubek(1)

1. Advacam, Czech Republic

Presenting author: Carlos Granja

The pixel detector Timepix3 onboard OneWeb JoeySat provides detailed wide-range space radiation data in orbit. Mapping over long periods a model can provide radiation monitoring and threshold alarms for onset of radiation effects.

DW-17

Radiation Evaluation of the Texas Instruments TPS7H3024-SP Radiation Hardened Four-Channel Supervisor with Watchdog

Authors: T. Lew(1), A. Marinelarena(1), J. Cruz-colon(1), S. Khan(2)

1. Texas Instruments, USA, 2. Texas Instruments Inc., USA

Presenting author: Tyler Lew

Single Events Effect (SEE) characterization and total ionizing dose (TID) results for the TPS7H3024-SP 14-V integrated four-channel supervisor are summarized, showing very robust SEE performance up to LETEFF=75 MeV-cm2/mg and excellent TID behavior.

DW-18

Total Ionizing Dose Characterization of Microchip Programmable Current Limiting Power Switch LX7712

Authors: R. Stevens(1), D. Johnson(2)

1. Microchip, USA, 2. Microchip Technology, USA

Presenting author: Russell Stevens

IThe 100krad, 50krad and 25krad total ionizing dose characterization results of Microchip Technology’s radiation-hardened Programmable Current Limiting Power Switch LX7712, are presented.

DW-19

TID and SEE Response of the INA129 Instrumentation Amplifier

Authors: J. Cardenas chavez(1), D. Hiemstra(2), B. Saha(1), A. Noguera cundar(3), L. Chen(1)

1. University of Saskatchewan, Canada, 2. MDA, Canada, 3. Univeristy of Saskatchewan, Canada

Presenting author: Jaime Cardenas Chavez

TID effects on INA129 instrumentation amplifier were studied using low dose rate 60Co irradiation and Two-Photon Absorption laser was employed to replicate the SEE behavior obtained from heavy ion experiments.

DW-20

TID Response Characterization of the LP2951 Low Dropout Voltage Regulator

Authors: A. Noguera cundar(1), D. Hiemstra(2), J. Cardenas chavez(1), D. Feist(1), L. Chen(1)

1. University of Saskatchewan, Canada, 2. MDA, Canada

Presenting author: Adriana Noguera Cundar

TID effects on the LP2951 low dropout voltage regulator were studied using low dose rate 60Co irradiation. The study tested 36 input/load combinations, revealing significant performance degradation at lower input voltages and load currents.

DW-21

Radiation response data of power units for the university small satellite ROMEO

Authors: T. Löffler(1), K. Waizenegger(1), J. Burgdorf(1), N. Bonidis(1)

1. Universität Stuttgart, Germany

Presenting author: Thorben Löffler

A collection of heavy-ion and proton radiation test results of power devices for the component selection of the satellite ROMEO [1] is presented. Further, an analysis predicts latch-up rates of selected devices during orbital lifetime.

DW-22

Correlation Between Interface Engineering and Radiation Resistance of Nanoscale Devices

Authors: C. Kang(1), K. Su jin(1), L. Yongsu(1), P. Jeong min(1)

1. Korea Atomic Energy Research Institute, Korea, Republic of

Presenting author: Chang Goo kang

The effects of interface engineering of two kind of nanoscale devices, MoS2 transistors and ZnO TFTs, were investigated against gamma-ray and proton irradiation. The irradiation degradation of device can be significantly minimized by interface engineering.

DW-23

TID Effects on Opal Photonic Crystal Films

Authors: K. Stoev(1), E. Simova(2), H. Fudouzi(3)

1. CNL, Canada, 2. Canadian Nuclear Laboratories, Canada, 3. National Institute for Materials Science, Japan

Presenting author: Krassimir Stoev

Opal films are thin layers of colloidal crystals deposited on plastic sheets. The opal films were irradiated with x-rays to TID of 1 Mrad, and their performance was evaluated at different accumulated doses.

DW-24

Effect of Low Energy Proton Irradiation on Optocoupler Performance: Analysing the Role of Packaging

Authors: A. Romero_maestre(1), J. De_martin_hernandez(1), P. Martin_holgado(1), M. Dominguez(2), B. Campanini(3), Y. Morilla(4)

1. Centro Nacional de Aceleradores (CNA), Spain, 2. ALTER, Spain, 3. Micropac, USA, 4. CNA, Spain

Presenting author: Amor Romero_Maestre

This work analyzes the radiation effects of low-energy protons on the same type of optocoupler using different packages, as well as distinct LED wavelengths within the same package. The study focuses on the CTR degradation.

DW-25

ATA6571RT CAN FD Transceiver with High-Voltage WAKE Pin Single Event Effects & Total Ionizing Dose

Authors: J. Bernard(1), H. Meneu(1), R. Bouakaz(1), F. Malou(2), D. Dangla(2), B. Treuillard(1), V. Beranger(1), K. De saint jan(1), G. Bourg-cazan(1), E. Leduc(1)

1. Microchip Technology, France, 2. Centre National d'Etudes Spatiales, France

Presenting author: Jean-Guy BERNARD

This paper reports results of Single Event Effects (SEE) and Total Ionizing Dose (TID) conducted by Microchip on the CAN FD transceiver ATA6571RT.

DW-26

TID response characterization of COTS Operational Amplifiers

Authors: M. Sharma(1), J. Cardenas chavez(1), D. Hiemstra(2), A. Noguera cundar(1), L. Chen(1)

1. University of Saskatchewan, Canada, 2. MDA, Canada

Presenting author: Manasi Sharma

This study evaluated the Total Ionizing Dose response of four different COTS operational amplifiers using low dose rate 60Co irradiation. Results revealed all amplifiers remained functional up to 30 krad(Si).

DW-27

A Radiation-hardened Time-to-Digital Converter chip with 8 ps Single-Shot Precision

Authors: B. Van bockel(1), N. Jadhav(1), D. Hendrickx(1), Y. Cao(1), H. Marien(1)

1. Magics Technologies, Belgium

Presenting author: Bjorn Van Bockel

A rad-hard-by-design time-to-digital converter ASIC with 8ps single-shot precision is radiation qualified for space in 2025. The electrical performance is presented and its excellent radiation performance for SEE and TID is demonstrated.

DW-28

Guide to the 2024 RADECS Radiation Effects Data Workshop Session

Authors: D. Hiemstra(1)

1. MDA Space, Canada

Presenting author: David Hiemstral

The 2024 RADECS Data Workshop Session has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.

DW-29 L

SEE and beam characterization with high energy heavy ions at HIMAC

Authors: M. Cecchetto(1), K. Bilko(2), R. Garcia(1), S. Kodaira(3), J. Autran(4)

1. CERN, Switzerland, 2. Université Jean Monnet, France, 3. Quantum Science and Technology (QST), Japan, 4. Institut de Physique de Rennes (IPR), France

Presenting author: Matteo Cecchetto

Single Event Effect cross sections and energy deposition in a silicon diode were measured with high energy heavy ions at HIMAC, in Japan, by varying LETs through PMMA degraders.

DW-30 L

Effect of temperature on SEEs in SiGe HBT exposed to proton and heavy ion beams

Authors: J. Zhang(1), W. Hajdas(2)

1. Xidian University, China, 2. Pau Sherrer Institute, Switzerland

Presenting author: Jinxin Zhang

The effect of temperature on SEE in SiGe HBT was tested in proton and heavy-ion exposed. The cryogenic and room temperature were applied during proton test. Heavy-ion irradiations were conducted at -125°C, 25C and +125°C.

DW-31 L withdrawn

Neutron and Total Ionizing Dose Effect on OLF400 Darlington Optocoupler

Authors: B. Jun(1), W. Boley(2), T. Fanous(2), D. Ramirez(2)

1. Northrop Grumman Mission Systems, USA, 2. NGMS, USA

Presenting author: Bongim Jun

The effects of neutron and ionizing radiation on Darlington OLF400 optocouplers are studied. The current transfer ratio decreases with increasing displacement and ionizing dose. The CTR recovers as a function of annealing time.

DW-32 L

SEE Characterization of the 4 Tb 3DFN4T16LB1862 and 8 Tb 3DFN8T16LB2821 3D NAND flash memories for space application

Authors: P. Kohler(1), A. Bosser(1), A. Sellaï(1), P. Wang(1)

1. 3D PLUS, France

Presenting author: Alexandre Bosser

This paper presents the investigation of heavy-ion induced SEE (Single-Event Effects) carried out on a 3D PLUS 4Tb 3D NAND flash memory. The test data reveals that the DUT is suitable for space applications.

DW-33 L

LM5113-Q1 SEE Radiation Test Report

Authors: T. Giroud(1), B. Vandoren(1)

1. Arcsec NV, Belgium

Presenting author: Thomas Giroud

This study explores Single Event Effect testing on the TI LM5113-Q1 Half Bridge GaN Driver. Heavy ions were used to irradiate the device at the RADEF facility in Finland.

DW-34 L

Characterisation of AMD Versal FPGA Transceivers Under Heavy-Ion Radiation

Authors: A. Gonzalez(1), A. Ferrer florit(1), M. Farras casas(1), S. Parkes(2), P. Maillard(3), K. O'neil(3)

1. STAR-Barcelona S.L., Spain, 2. STAR-Dundee Ltd, United Kingdom, 3. AMD Inc., USA

Presenting author: Alberto Gonzalez

This paper presents heavy-ion characterisation of AMD Versal FPGA transceivers, revealing their radiation sensitivity. Results show that SpaceFibre robustly mitigates errors, enabling a 100 Gbit/s link under radiation with error rates reduced by 1000x

DW-35 L

Heavy Ion SEE Results of Analog Devices µModule DC/DC Converters

Authors: A. Omprakash(1), M. Byers(1), M. Herrera(1), F. Lara(1), A. Huynh(1), K. Kobayashi(1), F. Biacan(1)

1. Raytheon Technologies, USA

Presenting author: Anup Omprakash

Heavy ion SEE results are presented for two Analog Devices µModule DC/DC Converters: LTM4642 and LTM8024.

ANTWERP
Belgium

29 September- 3 October
2025