SESSION C Tuesday, 30 September
Photonics, Optoelectronics & Sensors
Chairs: Vincent Goiffon & Adriana Morana
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Queen Elisabeth Hall
C1 17:05 - 17:20
Radiation Effects Specific to State-of-the-Art Global Shutter CMOS Image Sensors
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Authors: A. Jouni(1), A. Vriet(1), L. How(2), A. Merlenghi(1), M. Beaumel(3)
1. Sodern, France, 2. AdvEOTec, France, 3. SODERN, France​
Presenting author: Ali Jouni
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Radiation-Induced degradation arising from the operation principle of global shutter CMOS Image Sensors are studied. Increased charge generation rate in voltage and charge domain pixels memory nodes are highlighted.
C2 17:20 - 17:35
Impact of Hole Traps on the Dark Current of Proton Irradiated Ga-Free T2SL Infrared Detector
Authors: H. Mezouar, A. Michez, M. Tornay, P. Christo
University of Montpellier, France
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Presenting Author: Hassen Mezouar
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We study the dark current in Ga-free InAs/InAsSb type-II superlattice midwave infrared barrier photodetectors irradiated with 60 MeV protons. The observed degradation, caused by displacement damage, is attributed to hole traps, impacting device performance.
C3 17:35 - 17:50
Electro-Optic Response of Silicon Photonics Ring Modulators under Ionizing Radiation
Authors: D. Alfiero(1), L. Olantera(1), C. Scarcella(1), A. Cristiano(1), S. Detraz(1), H. Fabik(1), H. Muthuganesan(1), I. Quintana ponce(1), C. Sigaud(1), C. Soos(1), J. Troska(1)
1. CERN, Switzerland
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Presenting Author: Daniele Alfiero
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The electro-optic frequency response of silicon photonic ring modulators was measured up to 12MGy total ionizing dose. Significant temperature-dependent degradation in both modulation efficiency and bandwidth was observed. Short high-temperature annealing achieved almost complete recovery.
C4 17:50 - 18:05
LED Lightning Influence on the Radiation Response of Erbium Doped Fiber Amplifiers
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Authors: A. Facchini(1), L. Weninger(1), A. Morana(2), L. Mescia(3), T. Robin(4), A. Boukenter(1), E. Marin(1), Y. Ouerdane(1), S. Girard(5)
1. Laboratoire Hubert Curien, France, 2. Laboratory Hubert Curien, France, 3. Politecnico di Bari, Italy, 4. Exail, France, 5. Université de Saint Etienne, France
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Presenting Author: Alberto Facchini
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We studied the radiation response of two different amplifiers based on radiation hardened optical fibers when an external LED lightning is used to photobleach these fibers radiation-induced attenuation and limit the gain degradation.
POSTERS
PC-1
Degradation Analysis of CMOS Image Sensors under Proton Irradiation for Star Sensor Applications
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Authors: K. Li(1), J. Feng(1), L. Wen(1), J. Zhao(2), Y. Li(1)
1. Xinjiang Institute of Physics and Chemistry, Chinese Academy of Sciences, China, 2. KU Leuven, Department of Electrical Engineering, Belgium
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Presenting author: Kunfang Li
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This paper conducted irradiation experiment of CMOS image sensor with 30MeV protons, and analyzed the degradation for detection and positioning capability of star sensor according to degradation of CIS’s Id, DCNU, QE and hot pixels.
PC-2
Radiation Hardness assessment of a CMOS-TDI Sensor System for Space-Borne Imaging Applications
Authors: G. Hirsch, A. Wirth, X. Amigues, E. Chernyavskiy, A. Eckardt DLR, Germany
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Presenting Author: Georg Hirsch
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We irradiated a newly developed CMOS TDI sensor system with heavy ions, gamma rays, and protons. Radiation effects, including SEEs and dark current changes, were evaluated. We demonstrated the systems suitability for LEO missions.
PC-3
Nanoscale-Featured Integrated Photonic Devices in Harsh Radiation Environments
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Authors: K. Arnold, N. Karom, R. Schrimpf, D. Fleetwood, S. Kosier, R. Reed, S. Weiss Vanderbilt University, USA
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Presenting Author: Kellen Arnold
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Resilience to ionizing dose and displacement damage is shown for photonic crystals with features <100 nm, foretelling reliable next-generation integrated photonic devices for communications and quantum applications in harsh radiation environments.
PC-4
Radiation Effects on Red, Green and Blue Light Emitting Diodes​
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Authors: G. Ciachera(1), L. Weninger(1), D. Lambert(2), M. Darnon(1), A. Morana(3), V. Lalucaa(4), J. Belloir(4), C. Durnez(4), C. Virmontois(4), N. Kerboub(4), J. Mekki(4), Y. Morilla(5), P. Martin_holgado(6), A. Romero(6), M. Gaillardin(2), P. Paillet(2), S. Girard(7)
1. Laboratoire Hubert Curien, France, 2. CEA, France, 3. Laboratory Hubert Curien, France, 4. CNES, France, 5. CNA, Spain, 6. Centro Nacional de Aceleradores (CNA), Spain, 7. Université de Saint Etienne, France
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Presenting author: Geoffrey Ciachera
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We investigate the impact of radiation (protons, gamma) on the electro-optical performances of RGB LEDs. Gamma-radiation up to 100 krad leads to no degradation while 15 MeV protons at different fluences degrade LEDs efficiency.
PC-5L
Novel Silicon Photomultipliers structures for ionizing-radiation effects mitigation​
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Authors: F. Acerbi(1), L. Parellada monreal(1), A. Gola(2)
1. FBK, Italy, 2. Fondazione Bruno Kessler (FBK), Italy
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Presenting author: Fabio Acerbi
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We developed new SiPM technologies with improved ionizing radiation hardness. For example, with active trench bias contact, or charge focusing. We tested them with X-rays showing a much better recovery of noise levels after irradiation.