SESSION A Friday, 3 October
Single Event Effects: Mechanisms & Modelling
Chairs: Marc Gaillardin & Joel Hales
Queen Elisabeth Hall
A1 09:35 - 09:50
Experimental Calibration and Validation of a Voltage-Dependent SET Model in 65 nm CMOS
Authors: V. Kampati(1), M. Gorbunov(2), Z. Li(2), B. Vignon(2), L. Berti(2), P. Leroux(1), J. Prinzie(1)
1. KU Leuven, Belgium, 2. imec, Belgium
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Presenting author: Venkata Sathyajith Kampati
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This paper presents the experimental calibration of a dynamic voltage-dependent Verilog-A model for single-event transients (SETs) in 65 nm CMOS, validated using SET pulse width data at 48 MeV·cm²/mg, with errors reduced to below 10%.
A2 09:50 - 10:05
Sensitive Volume Allocation Aligned with a Physics-Based Analytical Cross Section Model for Monte Carlo-Based Proton-Induced SEU Simulation
Authors: K. Takeuchi(1), M. Hashimoto(2)
1. Japan Aerospace Exploration Agency, Japan, 2. Kyoto University, Japan
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Presenting Author: Kozo Takeuchi
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A method of constructing physically reasonable multiple sensitive volumes in particle transport Monte Carlo simulation is proposed in this paper. The validity of method is discussed with the proton-induced single event upsets on several SRAMs.
A3 10:05 - 10:20
Single-Event Transient Pulse Widths at the 3-nm bulk FinFET node
Authors: J. Kronenberg(1), Y. Xiong(1), N. Pieper(1), D. Ball(1), B. Bhuva(1)
1. Vanderbilt University, USA
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Presenting Author: Jenna Kronenberg
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Single-event transient pulses in 3-, 5-, and 7-nm combinational logic circuits and corresponding single-event cross-sections were obtained using SET filter circuits.
POSTERS
PA-1
Charge collection prediction and analysis in 3nm FinFET using the ambipolar diffusion with a-cutoff model
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Authors: S. El hajji(1), G. Gasiot(1), T. Thery(1), V. Correas(1), N. Pieper(2), Y. Xiong(2), J. Kronenberg(2), J. Autran(3), B. Bhuva(2), D. Pandini(4), V. Malherbe(1), P. Roche(1)
1. STMicroelectronics, France, 2. Vanderbilt University, USA, 3. Rennes University, France, 4. STMicroelectronics, Italy
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Presenting author: Sayah El Hajji
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The ambipolar diffusion with a-cutoff (ADC) model is reviewed and applied to 3nm FinFET flip-flops. Charge collection mechanisms in FinFET are discussed, along with the influence of process and design features.
PA-2
Direct Measurements of Single-Event Burnout Current Induced by Neutron Irradiation in a 1200 V Fast Recovery Diode
Authors: H. Nakamoto(1), J. Furuta(2), M. Yabuuchi(3), H. Sakamoto(3), R. Nakajima(1), K. Kobayashi(4), M. Sakai(5), S. Kumashiro(3) ​1. Kyoto Institute of Technology, Japan, 2. Okayama Prefectural University, Japan, 3. Renesas Electronics Corporation, Japan, 4. Kyoto Institure of Technology, Japan, 5. Gunma University Heavy Ion Medical Center, Japan
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Presenting Author: Hikaru Nakamoto
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This study presents direct measurements of SEB current in a 1200 V FRD under neutron irradiation. Simulations indicate that incorporating increased charge generation and higher impact ionization improves agreement with experimentally observed current.
PA-3
A Mathematical Model to Identify the Occurrence of Stuck Bits in Radiation-Ground Tests
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Authors: F. Franco(1), M. Rezaei(1), J. Fabero(1), H. Mecha(1), A. Colangeli(2), J. Clemente(1)
1. Universidad Complutense de Madrid, Spain, 2. ENEA, Italy
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Presenting Author: Francisco J Franco
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This abstract presents a mathematical model to estimate the expected number of repeated cells in memories due to single event upsets. Deviations from this model provide an objective criterion for identifying stuck bits.
PA-4
SEU-Resilient Design of 8T SRAM Utilizing Complementary FET (CFET) Technology
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Authors: Z. Zhang(1), W. Chen(1), J. Lin(2), L. Cai(1)
1. Sun Yat-Sen University School of Microelectronics Science and Technology, China, 2. Sun Yat-Sen University School of mi, China,
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Presenting author: Zhengxin Zhang
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This paper proposes an 8T CFET SRAM design that reduces area by 75% compared to FinFET SRAM while achieving an 85.3% reduction in upset cross-section, enhancing radiation tolerance significantly.
PA-5
A Charge-Width Calibration Approach for the Compact Modeling of Single Event Transients
Authors: Z. Li(1), M. Gorbunov(1), H. Caldas kessler(1), G. Franciscatto(1), V. Kampati(2), J. Zhao(2), J. Prinzie(2), L. Berti(1)
1. IMEC, Belgium, 2. KU Leuven, Belgium
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Presenting Author: Zheyi Li
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This paper introduces a novel calibration methodology for the Single-Event Transient (SET) compact model and offering insights into the underlying charge recombination effects in the charge collection process.
PA-6
Analysis of Shift Phenomena in SEE-Sensitive Nodes within Digital LDO under Clock Frequency Variations
Authors: R. Deng, H. Yuan, T. Li, Y. Chi, X. Chen, S. Liu, Z. Deng
National University of Defense Technology, China
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Presenting Author: Ruiqi Deng
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The shift phenomenon of SEE sensitive nodes from the shift register to power transistors is first observed in the digital LDO, demonstrating that the sensitive nodes in discrete sampling circuits are dependent on operating conditions.
PA-7
EV SEB failure Rate Modeling based on Neutron SEE Test for SiC MOSFET in SW Mode
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Authors: D. Bae(1), J. Park(2), M. Jo(3), L. Keunwoo(1), K. Kiseog(1), K. Youngboo(1)
1. QRT, Korea, Republic of, 2. Hyundai Motor Company, Korea, Republic of, 3. QRT Inc., Korea, Republic of
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Presenting Author: Dongwoo Bae
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We modeled EV’s SEB failure rate based on neutron SEE test for SiC MOSFET in switching mode. We found the probability of SEB increase with longer driving distances and higher speeds of EVs.
PA-8L
Burnout susceptibility of silicon power diodes when exposed to 14 MeV neutrons
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Authors: G. Canale parola(1), F. Velardi(1), S. Palazzo(2), G. Busatto(1), A. Sanseverino(1), E. Martano(1), S. Alberton(3), J. Wyss(1)
1. University of Cassino and Southern Lazio, Italy, 2. University of Casssino and Southern Lazio, Italy, 3. University of Sao Paulo, Institute of Physics, Brazil
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Presenting Author: Giovanni Canale Parola
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Low-energy neutrons can lead to significant failures in high-voltage power devices; a novel approach examines the effects of nuclear reaction products from low-energy neutrons inside the device, combining experimental characterization and numerical simulation.
PA-9L
The influence of angular incidence on pulse quenching in sub-20 nm FinFET technology​
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Authors: J. Yang(1), J. Yang(2), Y. Chi(3), P. Huang(4), R. Sun(4), Y. Jiao(2), Y. Pei(2), T. Ying(5), Y. Wei(2), X. Cui(2), X. Li(2)
1. School of Astronautics and the Technology Innovation Center of Materials and Devices for Extreme Environment, Harbin Institute of Technology, China, 2. School of Materials Science and Engineering and the Technology Innovation Center of Materials and Devices for Extreme Environment, Harbin Institute of Technology, China, 3. Micro-electronics and microprocessor institute, School of Computer, National University of Defense Technology, China, 4. Micro-electronics and microprocessor institute, School of Computer, National University of Defense Technolog, China, 5. School of Physics and the Technology Innovation Center of Materials and Devices for Extreme Environment, Harbin Institute of Technology, China
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Presenting Author: Jinhu Yang
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​​​The single-event transient pulse quenching effect of sub-20 nm bulk FinFET under different azimuth incident angles was studied by heavy ion experiment.